1 www.fairchildsemi.com ?2006 fairchild semiconductor corporation FFB20UP20S rev. a 2 FFB20UP20S 20 a, 200 v, ultrafast diode FFB20UP20S features ? ultrafast recovery, t rr = 45 ns (@ i f = 20 a) ? max forward voltage, v f = 1.15 v (@ t c = 25c) ? reverse voltage : v rrm = 200 v ? avalanche energy rated applications ? output rectifiers ? switching mode power supply ? free-wheeling diode for motor a pplication ? power switching circuits absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter value unit v rrm peak repetitive reverse voltage 200 v v rwm working peak reverse voltage 200 v v r dc blocking voltage 200 v i f(av) average rectified forward current @ t c = 115 c2 0 a i fsm non-repetitive peak surge current 60hz single half-sine wave 200 a t j, t stg operating junction and storage temperature - 65 to +150 c symbol parameter max unit r jc maximum thermal resistance, junction to case 2.0 c/w device marking device package reel size tape width quantity f20up20s FFB20UP20Stm d2-pak 13? dia - 800 1. anode 2. cathode 3. anode 1 2 3 1.anode 2.cathode 3.anode 1 d2-pak june 2006 ? rohs compliant 20 a, 200 v, ultrafast diode the FFB20UP20S is an ultrafast diode with low forward voltage drop and rugged uis capability . this devic e is intended for use as freewheeling and clamping diodes in a variety of switc hing power supplies and other power switc hing applications. it is specially suited for us e in switc hing power supplies and industrial applicationa as welder and ups application.
2 www.fairchildsemi.com FFB20UP20S 20 a, 200 v, ultrafast diode electrical characteristics t c = 25c unless otherwise noted * pulse test: pulse width=300 s, duty cycle= 2% test circuit and waveforms symbol parameter min. typ. max. unit v f * i f = 20 a i f = 20 a t c = 25 c t c = 100 c - - - - 1.15 1.0 v v i r * v r = 200 v v r = 200 v t c = 25 c t c = 100 c - - - - 100 500 a a t rr i f =1 a, di/dt = 100 a/s, v cc = 30 v i f =20 a, di/dt = 200 a/s, v cc = 130 v t c = 25 c t c = 25 c - - - - 35 45 ns ns t a t b q rr i f =20 a, di/dt = 200 a/s, v cc = 130 v t c = 25 c t c = 25 c t c = 25 c - - - 11 13 21 - - - ns ns nc w avl avalanche energy (l = 40mh) 20 - - mj ?2006 fairchild semiconductor corporation FFB20UP20S rev. a 2
3 www.fairchildsemi.com FFB20UP20S 20 a, 200 v, ultrafast diode typical performance characteristics figure 1. typical forward voltage dr op figure 2. typical reverse current figure 3. typical junction capacitance f igure 4. typical reverse recovery time figure 5. typical reverse recovery current figure 6. forward current deration curve 0.4 0. 6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 t c = 75 o c t c = 125 o c forward current , i f [a] forward vo ltage, v f [v] t c = 25 o c 0 50 100 150 200 1e-3 0.01 0. 1 1 10 t c = 125 o c t c = 100 o c t c = 75 o c reverse current , i r [a] reverse volta ge, v r [v] t c = 25 o c 0.1 1 10 100 0 50 100 150 200 250 300 350 400 junction c apacitance, c j [pf] reverse volt a ge, v r [v] f = 1 m hz 100 200 30 0 400 500 20 24 28 32 36 40 44 48 52 t c = 12 5 o c t c = 75 o c reverse recovery time, trr [ns] di/dt [a/ s] t c = 25 o c i f = 20a 100 200 300 400 500 0 2 4 6 8 10 12 t c = 125 o c t c = 75 o c reverse recovery current, irr [a] di/ d t [a/ s] t c = 25 o c i f = 20a 100 110 120 130 140 150 0 5 10 15 20 25 30 averag e forward current, i f(av) [a] case te mpera ture, t c [ o c] dc ?2006 fairchild semiconductor corporation FFB20UP20S rev. a 2
dimensions in millimeters mechanical dimensions FFB20UP20S 20 a, 200 v, ultrafast diode www.fairchildsemi.com 4 ?2006 fairchild semiconductor corporation FFB20UP20S rev. a 2
?2006 fairchild semiconductor corporation FFB20UP20S rev. a 2
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